Power Transistors
2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type darlington
0.7
±0.1
Unit: mm
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
For power amplification
Complementary to 2SB0950 and 2SB0950A
■
Features
•
High forward current transfer ratio h
FE
•
High-speed switching
•
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
7.5
±0.2
φ
3.1
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage
(Emitter open)
2SD1276
2SD1276A
V
CEO
V
EBO
I
C
I
CP
T
C
=
25°C
P
C
T
j
T
stg
Symbol
V
CBO
Rating
60
80
60
80
5
4
8
40
2.0
150
−55
to
+150
°C
°C
V
A
A
W
1 2 3
4.2
±0.2
Unit
V
Solder Dip
(4.0)
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
14.0
±0.5
0.8
±0.1
2.54
±0.3
Collector-emitter voltage 2SD1276
(Base open)
2SD1276A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
V
5.08
±0.5
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SD1276
2SD1276A
2SD1276
2SD1276A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
I
CEO
2SD1276
2SD1276A
V
BE
I
CBO
V
CE
=
3 V, I
C
=
3 A
V
CB
=
60 V, I
E
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
12 mA, I
B2
= −12
mA,
V
CC
=
50 V
20
0.5
4.0
1.0
1 000
1 000
Symbol
V
CEO
Conditions
I
C
=
30 mA, I
B
=
0
Min
60
80
Typ
E
Max
Unit
V
2.5
200
200
500
500
2
V
µA
µA
mA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
10 000
2.0
4.0
MHz
µs
µs
µs
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2 500
Q
P
2 000 to 5 000 4 000 to 10 000
SJD00190BED
Publication date: February 2003
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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•
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•
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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2002 JUL
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