Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1297
DESCRIPTION
・With
TO-3PN package
・High
DC current gain
・Low
saturation voltage
APPLICATIONS
・For
audio frequency power amplifier
and low speed high current switching
industrial use
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
导½
半
PARAMETER
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
MAX
150
100
8
25
50
1.5
UNIT
V
V
V
A
A
A
Base current
T
C
=25℃
100
W
3.0
150
-55~150
℃
℃
P
T
Total power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=30mA ;I
B
=0
I
C
=15A ;I
B
=30mA
I
C
=15A ;I
B
=30mA
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=15A ; V
CE
=2V
I
C
=25A ; V
CE
=2V
1000
250
MIN
100
2SD1297
TYP.
MAX
UNIT
V
1.5
2.2
10
5
30000
V
V
μA
mA
Switching times
t
on
t
stg
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
h
FE-1
Classifications
M
1000-3000
L
ANG
CH
IN
K
2000-5000
MIC
E SE
J
8000-30000
I
C
=15A; I
B1
=-I
B2
=30mA
V
CC
≈60V;R
L
=4Ω
OR
CT
NDU
O
1.0
5.0
2.0
μs
μs
μs
4000-10000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1297
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions
3
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