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2SC2216TPE2

Description
TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size85KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC2216TPE2 Overview

TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal

2SC2216TPE2 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity2 pF
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Minimum power gain (Gp)29 dB
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
VCEsat-Max0.2 V
Base Number Matches1

2SC2216TPE2 Related Products

2SC2216TPE2 2SC2717TPE2
Description TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal TRANSISTOR VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 2 pF 2 pF
Collector-emitter maximum voltage 45 V 25 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN
Minimum power gain (Gp) 29 dB 28 dB
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 300 MHz 300 MHz
VCEsat-Max 0.2 V 0.2 V
Base Number Matches 1 1
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