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2N1190

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size264KB,3 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N1190 Overview

Transistor,

2N1190 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee0
Maximum operating temperature100 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)2.3 MHz
Base Number Matches1

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Index Files: 2132  594  2112  2062  1211  43  12  42  25  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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