2SD1072 datasheet, PDF - EEWORLD Datasheet

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2SD1072: DescriptionPower Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size157KB，2 Pages; ManufacturerFuji Electric Co., Ltd.

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2SD1072 Overview

Power Bipolar Transistor, 5A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN

2SD1072 Parametric

Parameter Name	Attribute value
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	450 V
Configuration	DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	500
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	60 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SD1072

TRIPLE DIFFUSED PLANER TYPE

HIGH POWER DARLINGTON

HIGH VOLTAGE , SWITCHING

FUJI POWER TRANSISTOR

Outline Drawings

Features

High D.C. current gain

High reliability

TO-220AB

Applications

Switching regulators

DC-DC converter

Solid state relay

General purpose power amplifiers

1 : Base

2 : Collector

3 : Emitter

JEDEC

EIAJ

TO-220AB

SC-46

Equivalent Circuit Schematic

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Base current

Collector power disspation

Operating junction temperature

Storage temperature

Symbol

CBO

CEO

CEO(SUS)

EBO

stg

Ratings

450

350

0.3

+150

-55 to +150

Unit

°C

Electrical characteristics (T

=25°C unless otherwise specified)

Item

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector-Base leakage current

Emitter-Base leakage current

D.C. current gain

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

Switching time

Symbol

CBO

CEO

CEO(SUS)

EBO

CBO

EBO

CE(Sat)

BE(Sat)

stg

Test Conditions

CBO

= 0.1mA

= 1A

EBO

= 50mA

CBO

= 450V

EBO

= 20V

= 3A, V

= 1.5V

= 3A, I

= 30mA

= 3A, I

= 30mA

= -30mA, R

= 20 ohm

Pw = 20µs, Duty =<2%

Min.

450

350

Typ.

Max.

Units

µs

0.1

500

1.5

2.0

1.5

12.0

6.0

Thermal characteristics

Item

Thermal resistance

Symbol

th(j-c)

Test Conditions

Junction to case

Min.

Typ.

Max.

2.0

Units

°C/W

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