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2SA2154MFV-GR(TPL3,F)

Description
TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-416VAR
CategoryDiscrete semiconductor    The transistor   
File Size151KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

2SA2154MFV-GR(TPL3,F) Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,150MA I(C),SOT-416VAR

2SA2154MFV-GR(TPL3,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountYES
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SA2154MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154MFV
General-Purpose Amplifier Applications
High voltage and high current
: V
CEO
=
−50
V, I
C
=
−150
mA (max)
0.8 ± 0.05
1.2 ± 0.05
0.4
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
Excellent h
FE
linearity
: h
FE
(I
C
=
−0.1
mA)/h
FE
(I
C
=
−2
mA) = 0.95 (typ.)
High h
FE
:
h
FE
= 120~400
Complementary to 2SC6026MFV
1
1
3
2
0.13 ± 0.05
Absolute Maximum Ratings
(Ta = 25°C)
0.5 ± 0.05
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−50
−50
−5
−150
−30
150*
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
0.4
VESM
JEDEC
JEITA
TOSHIBA
1.BASE
2.EMITTER
3.COLLECTOR
2-1L1A
Weight: 1.5 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6mm)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
Unit: mm
1
2007-11-01

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