INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC790
DESCRIPTION
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 1.4(V)(Max)@ I
C
= 2A
·DC
Current Gain-
: h
FE
= 40-240 @ I
C
= 0.5A
·Complement
to Type 2SA490
APPLICATIONS
·Designed
for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
50
V
40
V
5
V
3
A
-3
A
25
W
I
C
Collector Current-Continuous
I
E
Emitter Current-Continuous
Total Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SC790
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= 50mA; I
B
= 0
40
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 10mA; I
C
= 0
5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 2A; I
B
= 0.2A
B
1.4
V
V
BE
(on)
Base-Emitter On Voltage
I
C
= 2A; V
CE
= 2V
1.8
V
I
CBO
Collector Cutoff Current
V
CB
= 30V; I
E
= 0
10
μA
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
DC Current Gain
f
T
Current-Gain—Bandwidth Product
C
OB
Collector Output Capacitance
w
Y
.cn
i
em
cs
.is
w
w
V
EB
= 5V; I
C
= 0
I
C
= 0.5A; V
CE
= 2V
40
I
C
= 2A; V
CE
= 2V
13
I
C
= 0.5A; V
CE
= 2V
3
I
E
= 0; V
CB
= 10V; f= 1MHz
100
μA
240
MHz
70
pF
h
FE-1
Classifications
R
40-80
O
70-140
120-240
isc Website：www.iscsemi.cn
2
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