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2SC6026MFV-Y(L3PAV

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size162KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SC6026MFV-Y(L3PAV Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

2SC6026MFV-Y(L3PAV Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
Base Number Matches1
2SC6026MFV
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
0.22 ± 0.05
Unit: mm
1.2 ± 0.05
0.32 ± 0.05
0.80 ± 0.05
High voltage and high current
: V
CEO
= 50 V, I
C
= 150 mA (max)
Excellent h
FE
linearity :
h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
0.8 ± 0.05
1.2 ± 0.05
0.4
Complementary to 2SA2154MFV
0.4
High h
FE
:
h
FE
= 120 to 400
1
1
3
2
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
150*
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
0.5 ± 0.05
VESM
1.BASE
2.EMITTER
3.COLLECTOR
2-1L1A
JEDEC
JEITA
TOSHIBA
Note: Using continuously under heavy loads (e.g. the application of
Weight: 1.5 mg (typ.)
high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in
the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm
×
25.4 mm
×
1.6mmt)
Mount Pad Dimensions (Reference)
0.5
0.45
1.15
0.4
0.45
0.4
0.4
Unit: mm
Start of commercial production
2005-02
1
2014-03-01
0.13 ± 0.05

2SC6026MFV-Y(L3PAV Related Products

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Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor Rated power: 150mW Collector current Ic: 150mA Collector-emitter breakdown voltage Vce: 50V Transistor type: NPN
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 , , -
Reach Compliance Code unknow unknow unknow unknow unknown unknown -
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A 0.15 A - - -
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V - - -
Configuration SINGLE SINGLE SINGLE SINGLE - - -
Minimum DC current gain (hFE) 120 120 120 200 - - -
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 R-PDSO-F3 - - -
Number of components 1 1 1 1 - - -
Number of terminals 3 3 3 3 - - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - -
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - - -
Polarity/channel type NPN NPN NPN NPN - - -
surface mount YES YES YES YES - - -
Terminal form FLAT FLAT FLAT FLAT - - -
Terminal location DUAL DUAL DUAL DUAL - - -
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER - - -
Transistor component materials SILICON SILICON SILICON SILICON - - -
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz 60 MHz - - -
Base Number Matches 1 1 1 1 1 1 -
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