5STP 10T1600
5STP 10T1600
Old part no. T 907C-1000-16
Phase Control Thyristor
Properties
§
§
§
§
High operational capability
Possibility of serial and parallel connection
Applications
Controlled rectifiers
AC drives
Key Parameters
V
DRM
, V
RRM
= 1 600
I
TAVm
= 969
I
TSM
= 15 000
V
TO
= 0.933
r
T
= 0.302
V
A
A
V
mΩ
Types
V
RRM
, V
DRM
5STP 10T1600
5STP 10T1400
Conditions:
1 600 V
1 400 V
T
j
= -40 ÷ 125 °C,
half sine
waveform,
f = 50 Hz
Mechanical Data
F
m
m
D
S
Mounting
force
Weight
Surface
creepage
distance
Air strike
distance
10 ± 2 kN
0.20 kg
13 mm
D
a
8 mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250,
http://www.abb.com/semiconductors
TS - T/257/07 Jul-10
1 of 5
5STP 10T1600
Maximum Ratings
V
RRM
V
DRM
I
TRMS
I
TAVm
I
TSM
I
2
t
(di
T
/dt)
cr
Repetitive peak reverse
and off-state voltage
T
j
= -40
÷
125 °C
Maximum Limits
5STP 10T1600
5STP 10T1400
1 600
1 400
1 521
969
t
p
= 10 ms
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 8.3 ms
Unit
V
RMS on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
A
A
A
A
2
s
A/µs
Average on-state current
T
c
= 70 °C, half sine waveform, f = 50 Hz
Peak non-repetitive surge
half sine pulse, V
R
= 0 V
15 000
16 000
1 125 000
1 060 000
200
Limiting load integral
half sine pulse, V
R
= 0 V
Critical rate of rise of on-state current
I
T
= I
TAVm
, half sine waveform, f = 50 Hz,
V
D
= 2/3 V
DRM
, t
r
= 0.3 µs, I
GT
= 2 A
(dv
D
/dt)
cr
P
GAVm
I
FGM
V
FGM
V
RGM
T
jmin
- T
jmax
T
stgmin
-
T
stgmax
Critical rate of rise of off-state voltage
V
D
= 2/3 V
DRM
1 000
3
10
12
10
-40 ÷ 125
-40 ÷ 125
V/µs
W
A
V
V
°C
°C
Maximum average gate power losses
Peak gate current
Peak gate voltage
Reverse peak gate voltage
Operating temperature range
Storage temperature range
Unless otherwise specified T
j
= 125 °C
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - T/257/07 Jul-10
2 of 5
5STP 10T1600
Characteristics
min.
V
TM
V
T0
r
T
I
DM
I
RM
t
gd
Maximum peak on-state voltage
I
TM
= 1 500 A
Value
typ.
max.
1.400
0.933
0.302
70
70
2
Unit
V
V
mΩ
mA
mA
µs
Threshold voltage
Slope resistance
I
T1
= 1 206 A, I
T2
= 3 619 A
Peak off-state current
V
D
= V
DRM
Peak reverse current
V
R
= V
RRM
Delay time
T
j
= 25 °C, V
D
= 0.4 V
DRM
, I
TM
= I
TAVm
,
t
r
= 0.3 µs, I
GT
= 2 A
t
q
Turn-off time
I
T
= 1 500 A, di
T
/dt = 12.5 A/µs,
V
D
= 2/3 V
DRM
, dv
D
/dt = 50 V/µs
150
µs
Q
rr
I
H
I
L
V
GT
Recovery charge
the same conditions as at t
q
1 400
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= - 40 °C
T
j
= 25 °C
T
j
= 125 °C
µC
mA
mA
4
3
2
500
250
150
V
Holding current
Latching current
Gate trigger voltage
V
D
= 12V, I
T
= 4 A
170
90
450
350
0.25
I
GT
Gate trigger current
V
D
= 12V, I
T
= 4 A
mA
10
Unless otherwise specified T
j
= 125 °C
Thermal Parameters
R
thjc
Thermal resistance junction to case
double side cooling
anode side cooling
cathode side cooling
Value
32.0
52.0
83.0
10.0
20.0
Unit
K/kW
R
thch
Thermal resistance case to heatsink
double side cooling
single side cooling
K/kW
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - T/257/07 Jul-10
3 of 5
5STP 10T1600
Transient Thermal Impedance
Analytical function for transient
thermal impedance
i
τ
i
( s )
R
i
( K/kW )
Transient therm al im pedance junction
to case
Z
thjc
( K/kW )
35
30
25
20
15
10
5
0
0,001
1
0.4857
13.07
2
0.2162
8.03
3
0.0762
8.20
4
0.0043
2.57
5
0.0006
0.13
Z
thjc
=
∑
5
R
i
(1
−
exp(
−
t
/
τ
i
))
i
=
1
Conditions:
F
m
= 10 ± 2 kN, Double side cooled
Correction for periodic waveforms
180° sine:
add 2.3 K/kW
180° rectangular: add 3.1 K/kW
120° rectangular: add 5.2 K/kW
60° rectangular: add 8.7 K/kW
0,01
0,1
1
10
Square w ave pulse duration
t
d
( s )
Fig. 2 Dependence transient thermal impedance junction
to case on square pulse
2
∫
i dt
6000
24
1,5
I
TSM
22
1,4
1,3
1,2
1,1
1
0,9
0,8
0,7
100
5000
20
4000
18
16
14
12
3000
2000
1000
10
0
0
1
2
3
V
(V)
4
T
8
1
10
t ( ms )
Fig. 3 Maximum on-state characteristics
Fig. 4 Surge on-state current vs. pulse length,
half sine wave, single pulse,
V
R
= 0 V, T
j
= T
jmax
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - T/257/07 Jul-10
4 of 5
i
2
dt
(10
6
A
2
s)
I
T
( A )
I
TSM
( kA )
7000
T
j
= 25 °C
125 °C
26
1,6
5STP 10T1600
P
T
( W )
1600
1400
1200
1000
800
600
400
200
0
0
200
400
600
800
1000
DC
P
T
( W )
1800
180°
ψ
= 30° 60° 90° 120°
1800
1600
ψ
= 30° 60° 90° 120° 180°
270°
DC
1400
1200
1000
800
600
400
200
0
1200
0
200
400
600
800
1000
1200
I
TAV
( A )
I
TAV
( A )
Fig. 5 On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 6 On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
T
C
( °C )
120
T
C
( °C )
130
130
120
110
110
100
100
90
90
80
80
DC
70
70
DC
270°
60
0
200
ψ
= 30° 60°
400
600
90° 120°180°
800
1000
1200
60
0
200
ψ
= 30° 60° 90°120° 180°
400
600
800
1000
1200
I
TAV
( A )
I
TAV
( A )
Fig. 7 Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f
Notes:
Fig. 8 Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - T/257/07 Jul-10
5 of 5
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