Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4029
DESCRIPTION
・With
TO-3PL package
・Complement
to type 2SA1553
APPLICATIONS
・Power
amplifier applications
・Recommended
for 120W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
PARAMETER
固电
导½
半
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
230
230
5
15
1.5
UNIT
V
V
V
A
A
W
℃
℃
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ;I
B
=0
I
C
=8A ;I
B
=0.8A
I
C
=7A ; V
CE
=5V
V
CB
=230V I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=7A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
f=1MHz;V
CB
=10V
55
35
MIN
230
2SC4029
TYP.
MAX
UNIT
V
3.0
1.5
5
5
160
V
V
μA
μA
h
FE-1
classifications
R
55-110
O
固电
Collector output capacitance
导½
半
ANG
CH
IN
80-160
MIC
E SE
OR
CT
NDU
O
30
270
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4029
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4029
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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