Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・High
voltage ratings
・Excellent
safe operating area
APPLICATIONS
・Series
and shunt regulators
・High-fidelity
amplifiers
・Power
switching circuits
・Solenoid
drivers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6477 2N6478
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
导½
半
V
CBO
V
CEO
HAN
INC
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage
ES
G
2N6477
2N6478
2N6477
2N6478
Open emitter
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
140
160
120
140
5
2.5
4
1
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Open collector
V
A
A
A
W
℃
℃
T
C
=25℃
50
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
2.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6477
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6478
V
CEsat-1
V
CEsat-2
V
BE-1
V
BE-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Base-emitter on voltage
2N6477
I
CEX
Collector cut-off current
V
BE
=-1.5V
I
C
=1.0A;I
B
=0.1A
I
C
=2.5A;I
B
=0.5A
I
C
=1.0A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
V
CE
=130V
V
CE
=120V; T
C
=150℃
V
CE
=150V
V
CE
=140V; T
C
=150℃
V
CE
=80V;I
B
=0
V
CE
=100V;I
B
=0
V
EB
=5V; I
C
=0
I
C
=0.1A ;I
B
=0
CONDITIONS
2N6477 2N6478
MIN
120
TYP.
MAX
UNIT
V
140
1.0
2.0
1.8
3.0
2.0
10
mA
V
V
V
V
I
CEO
固电
导½
半
2N6478
2N6477
Collector cut-off current
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
INC
ANG
H
2N6478
MIC
E SE
I
C
=1.0A ; V
CE
=4V
I
C
=2.5A ; V
CE
=4V
OR
UCT
ND
O
2.0
2.0
25
5
250
0.2
150
2.0
10
mA
mA
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=4V
pF
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6477 2N6478
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3