TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| package instruction | SMALL OUTLINE, R-PQSO-G4 |
| Reach Compliance Code | unknow |
| Other features | LOW NOISE |
| Shell connection | SOURCE |
| Configuration | SINGLE |
| Maximum drain current (ID) | 0.08 A |
| FET technology | JUNCTION |
| highest frequency band | X BAND |
| JESD-30 code | R-PQSO-G4 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 125 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 10 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | TIN LEAD |
| Terminal form | GULL WING |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
| 2SK2332TE12L | 2SK2332TE12R | |
|---|---|---|
| Description | TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal | TRANSISTOR X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal |
| Is it lead-free? | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible |
| package instruction | SMALL OUTLINE, R-PQSO-G4 | SMALL OUTLINE, R-PQSO-G4 |
| Reach Compliance Code | unknow | unknow |
| Other features | LOW NOISE | LOW NOISE |
| Shell connection | SOURCE | SOURCE |
| Configuration | SINGLE | SINGLE |
| Maximum drain current (ID) | 0.08 A | 0.08 A |
| FET technology | JUNCTION | JUNCTION |
| highest frequency band | X BAND | X BAND |
| JESD-30 code | R-PQSO-G4 | R-PQSO-G4 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 4 | 4 |
| Operating mode | DEPLETION MODE | DEPLETION MODE |
| Maximum operating temperature | 125 °C | 125 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 240 | 240 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Minimum power gain (Gp) | 10 dB | 10 dB |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | TIN LEAD | TIN LEAD |
| Terminal form | GULL WING | GULL WING |
| Terminal location | QUAD | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Base Number Matches | 1 | 1 |
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