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BZT52C33S

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size73KB,2 Pages
ManufacturerHitano Enterprise Corp
Environmental Compliance
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BZT52C33S Overview

Zener Diode,

BZT52C33S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerHitano Enterprise Corp
package instructionR-PDSO-G2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeR-PDSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage33 V
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
HITANO ENTERPRISE CORP.
BZT52C2V4S THRU BZT52C56S
FEATURES
*
*
*
*
Planar Die construction
Zener Voltages from 2.4V - 56V
200mW Power Dissipation
Ideally Suited for Automated Assembly
Processes
MECHANICAL DATA
* Case: Molded Plastic
* Terminals: Solder plated, solderable per
MIL-STD-202, Method 208
* Polarity: See Diagram Below
* Mounting position: Any
* Weight: 0.008 gram Approx.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified. Single
resistive or
For
inductive
load,
load.
derate current
by
20%.
capacitive
phase,
half
wave,
60
Hz,
SYMBOL
Zener Current see Table "Characteristics"
Maximum Power Dissipation @T
A
=25 C
Maximum Forward Voltage @I
F
=10mA
Typical Thermal Resistance
Operating and Storage Temperature
o
VALUE
200
0.9
635
-55 to +150
UNITS
mW
Volts
o
Ptot
V
F
R
θJA
T
J
,Tstg
C/W
o
C
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