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MMPQ6842R2

Description
200mA, 30V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size45KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MMPQ6842R2 Overview

200mA, 30V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR

MMPQ6842R2 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G16
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-based maximum capacity4.5 pF
Collector-emitter maximum voltage30 V
ConfigurationSEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE)70
JESD-30 codeR-PDSO-G16
Number of components4
Number of terminals16
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN AND PNP
Maximum power consumption environment1.92 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)350 MHz
VCEsat-Max0.15 V

MMPQ6842R2 Related Products

MMPQ6842R2 MMPQ6842R1
Description 200mA, 30V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 0.2A I(C), 30V V(BR)CEO, 4-Element, NPN and PNP, Silicon
Maker Motorola ( NXP ) Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G16 SMALL OUTLINE, R-PDSO-G16
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-based maximum capacity 4.5 pF 4.5 pF
Collector-emitter maximum voltage 30 V 30 V
Configuration SEPARATE, 4 ELEMENTS SEPARATE, 4 ELEMENTS
Minimum DC current gain (hFE) 70 70
JESD-30 code R-PDSO-G16 R-PDSO-G16
Number of components 4 4
Number of terminals 16 16
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN AND PNP NPN AND PNP
Maximum power consumption environment 1.92 W 1.92 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 350 MHz 350 MHz
VCEsat-Max 0.15 V 0.15 V
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