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PSMN3R3-40YS

Description
100 A, 40 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
CategoryDiscrete semiconductor    The transistor   
File Size2MB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

PSMN3R3-40YS Overview

100 A, 40 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235

PSMN3R3-40YS Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionPLASTIC, LFPAK-4
Contacts235
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)162 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0033 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)546 A
Certification statusNot Qualified
surface mountYES
Terminal surfacePURE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
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