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2N4999

Description
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size230KB,2 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
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2N4999 Overview

Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-111, Metal, 4 Pin,

2N4999 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)5 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-111
JESD-30 codeO-MUPM-D4
Number of components1
Number of terminals4
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.85 V
Base Number Matches1
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