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BAT754AT/R

Description
DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
CategoryDiscrete semiconductor    diode   
File Size63KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAT754AT/R Overview

DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode

BAT754AT/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.42 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40

BAT754AT/R Preview

DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D088
BAT754 series
Schottky barrier (double) diodes
Product data sheet
Supersedes data of 1999 Aug 05
2003 Mar 25
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
FEATURES
Very low forward voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption
applications, e.g. hand-held
applications.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Low forward
voltage selection of the BAT54 series.
Single diodes and double diodes with
different pinning are available.
MARKING
TYPE NUMBER
BAT754
BAT754A
BAT754C
BAT754S
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
MARKING
CODE
(1)
2K*
2L*
2M*
2N*
Fig.2
BAT754 single diode
configuration (symbol).
Fig.5
1
Top view
handbook, 2 columns
BAT754 series
PINNING
BAT754
PIN
A
1
2
3
a
n.c.
k
k
1
k
2
C
a
1
a
2
S
a
1
k
2
MLC360
3
1
2
a
1
, a
2
k
1
, k
2
k
1
, a
2
3
Fig.3
BAT754A diode
configuration (symbol).
3
1
2
1
MGC421
2
MLC359
Fig.1
Simplified outline
(SOT23) and pin
configuration.
Fig.4
BAT754C diode
configuration (symbol).
3
2
n.c.
MLC357
3
1
2
MLC358
BAT754S diode
configuration (symbol).
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
T
amb
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
t
p
1 s;
δ ≤
0.5
t = 8.3 ms half sinewave;
JEDEC method
PARAMETER
CONDITIONS
BAT754 series
MIN.
MAX.
UNIT
30
200
300
600
+150
125
+125
V
mA
mA
mA
°C
°C
°C
−65
−65
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.6
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
C
d
Note
1. Pulse test: t
p
= 300
μs; δ ≤
0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
reverse current
diode capacitance
V
R
= 25 V; note 1; see Fig.7
f = 1 MHz; V
R
= 1 V; see Fig.8
600
200
260
340
420
2
10
mV
mV
mV
mV
mV
μA
pF
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
GRAPHICAL DATA
MSA892
BAT754 series
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
3
IR
(μA)
10
2
(2)
(1)
MSA893
10
10
1
(1)
(2) (3)
1
(3)
10
1
10
1
0
0.4
0.8
VF (V)
1.2
0
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
15
MSA891
Cd
(pF)
10
5
0
0
10
20
VR (V)
30
f = 1 MHz; T
amb
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2003 Mar 25
4
NXP Semiconductors
Product data sheet
Schottky barrier (double) diodes
PACKAGE OUTLINE
BAT754 series
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2003 Mar 25
5

BAT754AT/R Related Products

BAT754AT/R BAT754CT/R
Description DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode DIODE 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-23 SOT-23
package instruction R-PDSO-G3 R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 30 V
surface mount YES YES
technology SCHOTTKY SCHOTTKY
Terminal surface TIN TIN
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40
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