INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2SA1962
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= -230V(Min)
·Good
Linearity of h
FE
·Complement
to Type 2SC5242
APPLICATIONS
·Power
amplifier applications
·Recommend
for 80W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
-230
V
V
CEO
Collector-Emitter Voltage
-230
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current-Continuous
-15
A
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
-1.5
A
P
C
130
W
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1962
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter Breakdown Voltage
I
C
= -50mA ; I
B
= 0
-230
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= -8A; I
B
= -0.8A
B
-3.0
V
V
BE(
on
)
Base-Emitter On Voltage
I
C
= -7A ; V
CE
= -5V
-1.5
V
I
CBO
Collector Cutoff Current
V
CB
= -230V ; I
E
= 0
-5
μA
I
EBO
Emitter Cutoff Current
V
EB
= -5V; I
C
= 0
-5
μA
h
FE-1
DC Current Gain
I
C
= -1A ; V
CE
= -5V
55
160
h
FE-2
DC Current Gain
I
C
= -7A ; V
CE
= -5V
35
C
OB
Output Capacitance
I
E
=0; V
CB
= -10V; f
test
= 1.0MHz
360
pF
f
T
Current-Gain—Bandwidth Product
I
C
= -1A; V
CE
= -5V
30
MHz
h
FE-1
Classifications
R
55-110
O
80-160
isc Website：www.iscsemi.cn
2
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