Equivalent circuit
C
Darlington
2SD2562
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=150V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=10A
I
C
=10A, I
B
=10mA
I
C
=10A, I
B
=10mA
V
CE
=12V, I
E
=–2A
V
CB
=10V, f=1MHz
Ratings
100
max
100
max
150
min
5000
min
∗
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
16.2
B
(7 0Ω )
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1649)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
150
150
5
15
1
85(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio, Series Regulator and General Purpose
(Ta=25°C)
Unit
External Dimensions
FM100(TO3PF)
0.8
±0.2
15.6
±0.2
5.5
±0.2
3.45
±0.2
5.5
ø3.3
±0.2
1.6
µ
A
V
9.5
±0.2
µ
A
23.0
±0.3
a
b
1.75
2.15
1.05
+0.2
-0.1
5.45
±0.1
1.5
4.4
5.45
±0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
∗h
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(Ω)
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
–5
I
B1
(mA)
10
I
B2
(mA)
–10
t
on
(
µ
s)
0.8typ
t
stg
(
µ
s)
4.0typ
t
f
(
µ
s)
1.2typ
3.35
B
C
E
Weight : Approx 6.5g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
15
V
C E
(sat) – I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a ge V
C E( s at)
( V )
3
I
C
– V
B E
Temperature Characteristics
(Typical)
15
(V
CE
= 4 V )
10mA
50mA
3mA
2m
A
1.5
mA
1 .0 m A
C ol l e c t o r C u r r e nt I
C
( A )
10
0.5mA
2
C o l l e c to r C u r r e n t I
C
( A)
0 .8 m A
10
Tem
p)
mp)
I
C
= . 1 5A
I
C
= . 10 A
1
I
C
= . 5A
e Te
C (C
ase
5
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
1
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
–30˚
C (C
I
B
=0.3mA
5
125
˚
25˚C
(Cas
ase T
emp)
2
3.0
2.2
C ol l ec t or - Emi tt er Vo l ta ge V
C E
(V)
Bas e C ur r en t I
B
( m A)
(V
C E
=4 V)
50000
D C C u r r e n t G a i n h
FE
D C C u r r e n t G a i n h
FE
50000
12
5˚C
( V
C E
= 4 V)
Transient Thermal Resistance
θ
j- a
( ˚ C/ W )
h
FE
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j- a
– t Characteristics
3. 0
Typ
10000
5000
10000
5000
1. 0
25
˚C
0. 5
–30
˚C
1000
500
02
0.5
1
C ol l ec t or C ur ren t I
C
(A )
5
10
15
1000
500
02
0 .5
1
C ol l ec t or C ur r e nt I
C
( A)
5
10
15
0. 1
1
10
100
Time t(ms)
1 00 0 2 0 0 0
f
T
– I
E
Characteristics
(Typical)
(V
C E
=1 2 V )
80
50
Safe Operating Area
(Single Pulse)
1 00
10
m
s
0m
Pc – Ta Derating
10
M ax im um P ow er Di s s i p a t i o n P
C
(W )
Cu t-o ff Fre q u e n c y f
T
( M H
Z
)
60
C olle c tor Cu r r e n t I
C
(A )
10
DC
5
s
80
W
ith
In
60
fin
ite
40
he
at
1
0.5
Without Heatsink
Natural Cooling
si
nk
40
20
20
Without Heatsink
0
25
50
75
10 0
125
150
0.1
0
–0.02 –0. 05 –0 1
– 0.5
–1
–5
–10
0.05
3
5
10
50
100
2 00
3 .5
0
Em i t t er C urr en t I
E
(A )
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T e m pe r a t u r e T a( ˚ C)
158
Embedded System
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