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2N5289

Description
Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size62KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
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2N5289 Overview

Power Bipolar Transistor, 10A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,

2N5289 Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max0.9 V
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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