TECHNICAL DATA
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495
Devices
2N5793
2N5794
2N5794U
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
One
Total
(1)
Section
Device
(2)
0.5
0.6
-65 to +200
Units
Vdc
Vdc
Vdc
mAdc
TO-78*
Total Power Dissipation
@ T
A
= +25
0
C
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 3.43 mW/
0
C for T
A
> +25
0
C
P
T
T
op
,
T
stg
0
W
C
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/495 for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CBO
Min.
40
Max.
Unit
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 75 Vdc
V
CB
= 50 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
V
EB
= 4.0 Vdc
10
10
10
10
µAdc
ηAdc
µAdc
ηAdc
I
EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2
2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 100
µAdc,
V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
I
C
= 100
µAdc,
V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 300 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 1.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 300 mAdc, I
B
= 30 mAdc
Base-Emitter Saturation Voltage
I
C
= 150 mAdc, I
B
= 15 mAdc
I
C
= 300 mAdc, I
B
= 30 mAdc
2N5793
h
FE
20
25
35
40
25
20
35
50
75
100
40
50
120
2N5794
2N5794U
h
FE
300
V
CE(sat)
0.3
0.9
0.6
1.2
1.8
10
8.0
33
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
C
ibo
t
t
2.0
pF
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
15 mAdc, V
BE(off)
= 0.5 Vdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 150 mAdc; I
B1
=
I
B2
=
15 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
on
45
310
ηs
ηs
off
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 2 of 2
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