Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1017
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SD1408
APPLICATIONS
・For
power amplifications
・Recommended
for 20-25W high-fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-80
-80
-5
-4
-0.4
UNIT
V
V
V
A
A
Open collector
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
W
25
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1017
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-50mA; I
B
=0
-80
V
V
CEsat
V
BE
Collector-emitter saturation voltage
I
C
=-3A; I
B
=-0.3A
I
C
=-3A ;V
CE
=-5V
-1.0
-1.7
V
Base-emitter on voltage
-1.0
-1.5
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-80V; I
E
=0
-30
I
EBO
Emitter cut-off current
V
EB
=-5V; I
C
=0
-100
h
FE-1
DC current gain
I
C
=-0.5A ; V
CE
=-5V
40
240
h
FE-2
DC current gain
f
T
C
OB
固电
IN
O
Transition frequency
导½
半
Y
I
C
=-3A ; V
CE
=-5V
15
I
C
=-0.5A; V
CE
=-5V
Collector output capacitance
h
FE-1
Classifications
R
40-80
70-140
ANG
CH
120-240
MIC
E SE
I
E
=0, f=1MHz ; V
CB
=-10V
OR
UCT
ND
O
9
130
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1017
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1017
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
4