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2SB1017R

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size170KB,4 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SB1017R Overview

Transistor

2SB1017R Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1017
DESCRIPTION
・With
TO-220Fa package
・Complement
to type 2SD1408
APPLICATIONS
・For
power amplifications
・Recommended
for 20-25W high-fidelity
audio frequency amplifier output stage
PINNING
PIN
1
2
3
Emitter
Collector
Base
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
固电
导½
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-80
-80
-5
-4
-0.4
UNIT
V
V
V
A
A
Open collector
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2.0
W
25
150
-55~150

2SB1017R Related Products

2SB1017R 2SB1017 2SB1017Y
Description Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow
Base Number Matches 1 1 1

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