2SK302TE85R datasheet, PDF - EEWORLD Datasheet

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2SK302TE85R: DescriptionTRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size367KB，7 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK302TE85R Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, TO-236, FET RF Small Signal

2SK302TE85R Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	CASCODE MOS
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	0.03 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.05 pF
highest frequency band	VERY HIGH FREQUENCY BAND
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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2SK302

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK302

FM Tuner, VHF RF Amplifier Applications

•

Low reverse transfer capacitance: C

rss

= 0.035 pF (typ.)

Low noise figure: NF = 1.7dB (typ.)

High power gain: G

= 28dB (typ.)

Recommend operation voltage: 5~15 V

Unit: mm

Absolute Maximum Ratings

(Ta

25°C)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature

Symbol

stg

Rating

±5

150

125

−55~125

Unit

°C

JEDEC

TO-236

Note: Using continuously under heavy loads (e.g. the application of high

JEITA

―

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

TOSHIBA

2-3F1C

reliability significantly even if the operating conditions (i.e.

Weight: 0.012 g (typ.)

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics

(Ta

25°C)

Characteristics

Gate leakage current

Drain-source voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Power gain

Noise figure

Symbol

GSS

DSX

DSS

(Note)

GS (OFF)

⎪Y

⎪

iss

rss

Test Condition

0 V, V

= ±5

= −4

V, I

100

μA

10 V, V

0 V

10 V, I

100

μA

10 V, V

0 V, f

1 kHz

10 V, V

0 V, f

1 MHz

10 V, V

0 V,

100 MHz (Figure 1)

Min

⎯

1.5

⎯

Typ.

⎯

3.0

0.035

1.7

Max

±50

⎯

−2.5

⎯

0.050

⎯

3.0

Unit

Note: I

DSS

classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA

2007-11-01

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