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FDS6890A

Description
7.5 A, 20 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size105KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDS6890A Overview

7.5 A, 20 V, 0.034 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

FDS6890A Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging code8LD, JEDEC MS-012, .150"NARROW BODY
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFAST SWITCHING
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)7.5 A
Maximum drain current (ID)7.5 A
Maximum drain-source on-resistance0.034 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
Humidity sensitivity level1
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FDS6890A
November 1999
FDS6890A
Dual N-Channel 2.5V Specified PowerTrench
TM
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Features
7.5 A, 20 V. R
DS(ON)
= 0.018
@ V
GS
= 4.5 V
R
DS(ON
)
= 0.022
@ V
GS
= 2.5 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON
)
.
High power and current handling capability.
Applications
DC/DC converter
Motor drives
D2
D1
D1
S2
G2
D2
5
6
7
8
4
3
2
1
pin
1
G1
S1
SO-8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
20
±8
(Note 1a)
Units
V
V
A
W
7.5
20
2.0
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1.0
0.9
-55 to +150
°C
T
J
, T
stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
90
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6890A
Device
FDS6890A
Reel Size
13
Tape W idth
12mm
Quantity
2500 units
1999
Fairchild Semiconductor Corporation
FDS6890A Rev. C
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