j
<7
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
io
ucti, One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SB1017
DESCRIPTION
• Low Collector Saturation Voltage-
:V
C
E(sa.)=-1.7V(Max)@l
c
=-3A
• Good Linearity of h
FE
• Complement to Type 2SD1 408
^^
2
||
|
j j
HI
1 2
PIM: 1 Base
2 Collector
3 Emitter
TO-220F* package
3
APPLICATIONS
• Designed for power amplifier applications.
• Recommended for 20-25W high-fidelity audio frequency
amplifier output stage.
<
t—
A" ~ '
t
»
f
•;
,
H
t
•/
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
i
j
1
C
*-! -*-V
k
*• **"L
VCBO
VOEO
Collector-Base Voltage
-80
V
Collector-Emitter Voltage
-80
V
«--
^
VEBO
Emitter-Base Voltage
-5
V
mm
Ic
Collector Current-Continuous
-4
A
DIM
IB
Base Current-Continuous
Collector Power Dissipation
@ T
a
=25"C
-0.4
A
A
B
C
D
F
G
2
W
PC
Collector Power Dissipation
@ T
C
=25'C
Tj
25
H
J
K
L
N
Q
R
Junction Temperature
150
•c
r
Tstg
Storage Temperature Range
-55-150
u
V
S
MIN
16.85
9.54
4.35
0.75
3.20
6.90
5.15
0.45
13.35
1.10
4.93
4.35
2.65
2.70
1.75
1.30
MAX
17.15
10.10
4.65
0.90
3.40
7.20
5.45
0.75
13.65
1.30
5.18
5.15
3.25
2.90
2.05
1.50
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \\ithout
notice. Information furnished by NJ Semi-Conductors is believed to he both accurate and reliable at the time of going
lo press. I louever. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Cimdnctors enauini.ucs customers to verily that datasheets are current before placing orders.
Qualify Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SB1017
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
l
c
= -50mA; I
B
= 0
-80
V
VcE(sat)
Collector-Emitter Saturation Voltage
l
c
= -3A; I
B
= -0.3A
-1.7
V
VsE(on)
Base-Emitter On Voltage
lc= -3A; V
CE
= -5V
-1.5
V
ICBO
Collector Cutoff Current
V
CB
= -80V; I
E
= 0
-30
MA
IEBO
Emitter Cutoff Current
V
EB
= -5V; l
c
= 0
-0.1
mA
hfE-1
hFE-2
DC Current Gain
lc= -0.5A; V
CE
=.
J
5V
40
240
DC Current Gain
lc= -3A; V
CE
= -5V
15
COB
Output Capacitance
lE=0;V
ce
=-10V;f=1MHz
130
PF
ft
Current-Gain— Bandwidth Product
l
c
= -0.5A; V
CE
= -5V
9
MHz
E -1 Classifications
R
40-80
0
70-140
Y
120-240
Industrial Control Electronics
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