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2SB1017R

Description
TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size157KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

2SB1017R Overview

TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power

2SB1017R Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9 MHz
Base Number Matches1

2SB1017R Related Products

2SB1017R 2SB1017O 2SB1017Y
Description TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 80 V 80 V 80 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 70 120
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 9 MHz 9 MHz 9 MHz
Base Number Matches 1 1 1
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