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2SB1017

Description
TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size57KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SB1017 Overview

TRANSISTOR 4 A, 80 V, PNP, Si, POWER TRANSISTOR, 2-10L1A, 3 PIN, BIP General Purpose Power

2SB1017 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)4 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)9 MHz
Base Number Matches1
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