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2SC4207-GR(TE85L,F)

Description
TRANSISTOR,BJT,ARRAY,COMM EMITTER,NPN,50V V(BR)CEO,150MA I(C),TSOP
CategoryDiscrete semiconductor    The transistor   
File Size238KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

2SC4207-GR(TE85L,F) Overview

TRANSISTOR,BJT,ARRAY,COMM EMITTER,NPN,50V V(BR)CEO,150MA I(C),TSOP

2SC4207-GR(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.15 A
Minimum DC current gain (hFE)200
Maximum operating temperature125 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Nominal transition frequency (fT)80 MHz
Base Number Matches1
2SC4207
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4207
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max)
High h
FE:
h
FE
= 120~700
Excellent h
FE
linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ.)
Complementary to 2SA1618
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C) (Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
(Note 1)
T
j
T
stg
Rating
60
50
5
150
30
300
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-3L1A
Note:
Weight: 0.014 g (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit
(top view)
1
2007-11-01

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