Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA755
DESCRIPTION
·With
TO-220 package
·Complement
to type 2SC1419
·Note:Type
2SA754 with short pin
APPLICATIONS
·For
low frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-50
-50
-4
-2
20
150
-55~150
UNIT
V
V
V
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ,R
BE
=∞
I
C
=-5mA ,I
E
=0
I
E
=-5mA ,I
C
=0
I
C
=-1.5A; I
B
=-0.15A
I
C
=-1A ; V
CE
=-4V
V
CB
=-20V; I
E
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-0.1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-4V
35
35
50
MIN
-50
-50
-4
TYP.
2SA755
MAX
UNIT
V
V
V
-1.3
-1.5
-100
200
V
V
μA
MHz
h
FE-1
Classifications
A
35-70
B
60-120
C
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA755
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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