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2N6732LEADFREE

Description
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-237AA, TO-237, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size31KB,1 Pages
ManufacturerCentral Semiconductor
Environmental Compliance
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2N6732LEADFREE Overview

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-237AA, TO-237, 3 PIN

2N6732LEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-237AA
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-237AA
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
Power Transistors
TO-237 Case
TYPE NO.
IC
(A)
MAX
2.0
2.0
2.0
2.0
2.0
0.5
1.0
1.0
1.0
1.0
1.5
1.5
PD
(W)
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
BVCBO
(V)
MIN
40
50
60
80
100
300
175
225
275
325
50
60
100
200
250
300
80
40
50
60
80
100
300
30
30
300
120
75
60
140
140
60
50
80
NPN
2N6714
2N6715
2N6716
2N6717
2N6718
2N6719
2N6720
2N6721
2N6722
2N6723
2N6724
2N6725
2N6731
2N6733
2N6734
2N6735
2N6737
CENW01
CENW05
CENW06
CENW07
CENW10
CENW13
CENW14
CENW42
TN2102
TN2219A
TN2905A
TN3019
TN3020
TN3053
TN3724
TN3725
PNP
2N6726
2N6727
2N6728
2N6729
2N6730
BVCEO
*BVCES
(V)
MIN
30
40
60
80
100
300
150
200
250
300
40
50
80
200
250
300
45
30
40
60
80
100
300
30*
30*
300
65
40
60
80
80
40
30
50
hFE
MIN
50
50
50
50
50
40
10
10
10
10
4,000
4,000
100
40
40
40
35
60
60
80
80
80
25
10,000
20,000
40
40
100
100
100
40
50
35
35
MAX
250
250
250
250
250
200
50
50
50
50
40,000
40,000
300
200
200
200
--
--
--
--
--
--
--
--
--
--
120
300
300
300
120
250
--
--
@ IC VCE(SAT) @ IC
(mA)
1,000
1,000
250
250
250
30
500
500
500
500
1,000
1,000
350
10
10
10
500
100
100
50
50
50
30
100
100
10
150
150
150
150
150
150
500
500
(V)
MAX
0.5
0.5
0.35
0.35
0.35
--
0.5
0.5
0.5
0.5
1.0
1.0
0.35
2.0
2.0
2.0
0.52
0.7
0.7
0.5
0.5
0.5
0.75
1.5
1.5
0.5
0.5
1.6
1.6
0.5
0.5
1.4
0.42
0.52
(mA)
1,000
1,000
250
250
250
--
100
100
100
100
200
200
350
20
20
20
500
1,000
1,000
250
250
250
20
100
100
20
150
500
500
500
500
150
500
500
fT
(MHz)
MIN
50
50
50
50
50
30
30
30
30
30
1.0
1.0
50
50
50
50
300
50
50
50
50
50
50
125
125
50
60
300
200
100
80
100
300
300
2N6732
1.0
0.5
0.5
0.5
1.5
CENW51
CENW55
CENW56
CENW57
CENW60
CENW63
CENW64
CENW92
1.0
1.0
0.5
0.5
0.5
0.5
1.0
1.0
0.5
1.0
0.8
0.8
1.0
1.0
1.0
1.5
1.5
CENW01A CENW51A
Shaded areas indicate Darlington.
(6-December 2004)
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