Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2599
DESCRIPTION
・With
TO-3P(H)IS package
・High
voltage;high speed
・Low
saturation voltage
・Bult-in
damper diode
APPLICATIONS
・Horizontal
deflection output for color TV
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
HAN
INC
SEM
GE
Open emitter
Open base
CONDITIONS
ON
IC
OR
DUT
VALUE
1500
600
5
3.5
7
1
UNIT
V
V
V
A
A
A
W
℃
℃
Open collector
T
C
=25℃
40
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2599
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
V
F
C
ob
f
T
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Diode forward voltage
Collector output capacitance
CONDITIONS
I
C
=300mA ;I
B
=0
I
C
=3A; I
B
=0.8A
I
C
=3A; I
B
=0.8A
V
CB
=1500V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
F
=3.5A
I
E
=0 ; V
CB
=10V,f=1MHz
66
8
1.5
MIN
5
5
0.9
8
1.5
1
200
25
2.0
V
pF
MHz
TYP.
MAX
UNIT
V
V
V
mA
mA
Switching times :
t
s
t
f
固电
Fall time
Transition frequency
导½
半
Storage time
ANG
CH
IN
MIC
E SE
I
C
=0.1A ; V
CE
=10V
I
CP
=3A;I
B1
=0.8A
f
H
=15.75kHz
DU
ON
OR
T
55
3
7.5
0.5
10
1.0
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2599
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2599
固电
导½
半
HAN
INC
SEM
GE
ON
IC
OR
DUT
4
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