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2MBI75L-060

Description
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN
CategoryDiscrete semiconductor    The transistor   
File Size131KB,4 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2MBI75L-060 Overview

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, M218, 7 PIN

2MBI75L-060 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts7
Reach Compliance Codeunknow
Other featuresHIGH SPEED SWITCHING
Maximum collector current (IC)75 A
Collector-emitter maximum voltage600 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)350 ns
JESD-30 codeR-XUFM-X7
Number of components2
Number of terminals7
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment650 W
Maximum power dissipation(Abs)395 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max3.5 V
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