, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
Silicon PNP Power Transistor
2SA766
DESCRIPTION
• Collector-Base Breakdown Voltage-
:V
(BR)C
BO=-150V(Min)
• High Collector Power Dissipation-
• Complement to Type 2SC1450
PIN t.BASE
APPLICATIONS
• Line-operated vertical deflection output
• Medium power amplifier
2. BETTER
-J
COLLECT OR (CASE)
TO-66 package
•••
ABSOLUTE MAXIMUM RATINGS(T
a
=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
t
l~
_
C
VCBO
Collector-Base Voltage
-150
V
V-
•JU-D
f
g
1
PL
i
K
L
G
c
u —»
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
*-£
t
X
MM
e
t."
i"^N,
/ |
S"~^
B
I
Ic
Collector Current-Continuous
-0.4
A
nun
A
MAX
31.40
31.80
17.30
17.70
6.70
7.10
0.70
0.90
1.40
1.60
5.08
2.54
10.20
9.80
14.70
14.90
12.40
12.60
3.60
3^0
24.30
24.50
3.50
3.70
urn
ICM
Collector Current-Peak
Total Power Dissipation
@ T
C
=25'C
Junction Temperature
-1.2
A
D
£
20
W
;}
h
H
I
PC
Tj
150
"C
T
stg
Storage Temperature Range
-65-150
°c
N
0
U
V
M Sem.-tonductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information turnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time
to press. I kmover. NJ Semi-Cotiiluctors assumes no responsibility Cor any errors or omissions discovered in its use
VI Semi-conductors encourages customers to verify that datasheet are current before placing orders
Quality Semi-Conductors
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA766
TYP.
MAX
UNIT
V(BR)CER
Collector-Emitter Breakdown Voltage
lc= -0.2A; L= 25mH, R
BE
= 5kO
-150
V
V(BR)EBO
Emitter-Base Breakdown Voltage
l
E
=-1mA; l
c
=0
-5
V
Vce(sat)
Collector-Emitter Saturation Voltage
I
C
=-1A; I
B
=-0.1A
-1.0
V
VsE(on)-1
Base-Emitter On Voltage
lc=-0.1A;V
C
E=-5V
-0.8
V
VeE(on)-2
Base-Emitter On Voltage
lc= -0.5A; V
GE
= -5V
-1.0
V
ICBO
Collector Cutoff Current
VCB= -60V; l
e
= 0
-30
uA
hpE-1
DC Current Gain
lc=-0.1A;V
CE
=-5V
35
150
hFE-2
DC Current Gain
lc= -0.5A; V
CE
= -5V
35
ft
Current-Gain — Bandwidth Product
I
E
=0.1A;V
0
B=-10V
15
MHz
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