INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SD907
DESCRIPTION
·High
Collector Current
·Good
Linearity of h
FE
·High
Reliability
·Wide
Area of Safe Operation
APPLICATIONS
·Audio
amplifier
·Series
regulators
·General
purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
w
.cn
i
em
cs
.is
w
w
VALUE
80
UNIT
V
80
7
V
V
10
A
1.5
80
150
-55~150
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
I
C
= 10mA; I
B
= 0
I
C
= 0.1mA; I
E
= 0
I
E
= 0.1mA; I
C
= 0
I
C
= 5A; I
B
= 0.5A
B
2SD907
MIN
80
80
7
TYP.
MAX
UNIT
V
V
V
1.2
2.0
0.1
0.1
V
V
mA
mA
I
C
= 5A; I
B
= 0.5A
B
Switching times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
w
.cn
i
em
cs
.is
w
w
V
EB
= 7V; I
C
= 0
I
C
= 2A; V
CE
= 5V
40
I
C
= 5A; I
B1
= -I
B2
= 0.5A
R
L
= 5Ω; P
W
=20μs;
Duty Cycle≤2%
V
CB
= 80V; I
E
= 0
1.0
2.0
1.0
μs
μs
μs
isc Website：www.iscsemi.cn
2
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