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2SK711TE85L

Description
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size235KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SK711TE85L Overview

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236, FET General Purpose Small Signal

2SK711TE85L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ConfigurationSINGLE
FET technologyJUNCTION
Maximum feedback capacitance (Crss)3 pF
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK711
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK711
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
High |Y
fs
|: |Y
fs
| = 25 mS (typ.)
Low C
iss
: C
iss
= 7.5 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
−20
10
150
125
−55~125
Unit
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1B
operating temperature/current/voltage, etc.) are within the
Weight: 0.012 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
⎪Y
fs
C
iss
C
rss
Test Condition
V
GS
= −15
V, V
DS
=
0 V
V
DS
=
0 V, I
G
= −100 μA
V
DS
=
5 V, V
GS
=
0 V
V
DS
=
5 V, I
D
=
1
μA
V
DS
=
5 V, V
GS
=
0 V, f
=
1 kHz
V
DS
=
5 V, V
GS
=
0 V, f
=
1 MHz
V
DS
=
5 V, I
D
=
0 mA, f
=
1 MHz
Min
−20
6
15
Typ.
25
7.5
2
Max
−1.0
32
−2.5
10
3
Unit
nA
V
mA
V
mS
pF
pF
Note: I
DSS
classification
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
(G)
(
(L)
(V)
) ...... I
DSS
rank marking
1
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