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2N6257

Description
Power Bipolar Transistor, 20A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size69KB,2 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

2N6257 Overview

Power Bipolar Transistor, 20A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin

2N6257 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)20 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)0.2 MHz
VCEsat-Max1.5 V
Base Number Matches1
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