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2N1309

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size264KB,3 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

2N1309 Overview

Transistor,

2N1309 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
ConfigurationSingle
Minimum DC current gain (hFE)80
JESD-609 codee0
Maximum operating temperature85 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)15 MHz
Base Number Matches1
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