Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2793
DESCRIPTION
·With
MT-200 package
·High
collector breakdown voltage
·Excellent
switching times
APPLICATIONS
·High
speed and high voltage switching
·Switching
regulator
·High
speed DC-DC converter
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (MT-200) and symbol
DESCRIPTION
·
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
900
800
7
5
7
3
100
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=10mA ;I
B
=0
I
C
=1mA ;I
E
=0
I
C
=3 A;I
B
=0.6 A
I
C
=3 A;I
B
=0.6 A
V
CB
=800V; I
E
=0
V
EB
=7V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=3A ; V
CE
=5V
10
10
MIN
800
900
2SC2793
TYP.
MAX
UNIT
V
V
1.0
1.5
100
1
V
V
μA
mA
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
=400V ,I
C
=3A,
I
B1
=0.3A;I
B2
=-0.8A
1.0
3.5
1.0
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2793
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
