Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6257
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・Designed
for audio amplifier and
switching circuits applications
PINNING
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
PARAMETER
固电
导½
半
GS
N
Open base
CONDITIONS
Open emitter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
HA
INC
MIC
E
TOR
UC
ND
O
VALUE
50
40
5
20
UNIT
V
V
V
A
W
℃
℃
Open collector
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
150
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6257
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
I
CEO
I
CEV
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltge
Collector-emitter saturation voltge
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=8A ;I
B
=0.8A
I
C
=20A ;I
B
=4A
V
CE
=40V; I
B
=0
V
CE
=50V; V
BE(off)
=1.5V
T
C
=150℃
V
CB
=50V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=8A ; V
CE
=4V
I
C
=20A ; V
CE
=4V
I
C
=1A;V
CE
=10V
15
5
MIN
40
1.5
4.0
1.0
0.1
5.0
0.1
0.1
TYP.
MAX
UNIT
V
V
V
mA
mA
mA
mA
电半
固
DC current gain
DC current gain
导½
Transition frequency
AN
CH
IN
MIC
SE
G
TOR
UC
ND
O
0.8
75
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6257
固电
导½
半
MIC
SE
G
AN
CH
IN
TOR
UC
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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