2SK2231
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
−π−MOSV)
2
2SK2231
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
: R
DS (ON)
= 0.12
Ω
(typ.)
: |Y
fs
| = 5.0 S (typ.)
Unit: mm
: I
DSS
= 100 µA (max) (V
DS
= 60 V)
: V
th
= 0.8~2.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Drain−source voltage
Drain−gate voltage (R
GS
= 20 kΩ)
Gate−source voltage
Drain current
DC
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
60
60
±20
5
20
20
129
5
2
150
−55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7B1B
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch−c)
R
th (ch−a)
Max
6.25
125
Unit
°C / W
°C / W
JEDEC
JEITA
TOSHIBA
―
SC-64
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 25 V, T
ch
= 25°C (initial), L = 7 mH, R
G
= 25
Ω,
I
AR
= 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.36 g (typ.)
1
2006-11-17
2SK2231
Electrical Characteristics
(Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
I
GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
|Y
fs
|
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
≈
48 V, V
GS
= 10 V, I
D
= 5 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Test Condition
V
GS
= ±16 V, V
DS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
GS
= 4 V, I
D
= 1.3 A
V
GS
= 10 V, I
D
= 2.5 A
V
DS
= 10 V, I
D
= 2.5 A
Min
—
—
60
0.8
—
—
3.0
—
—
—
—
Typ.
—
—
—
—
0.20
0.12
5.0
370
60
180
18
Max
±10
100
—
2.0
0.30
0.16
—
—
—
—
—
pF
Unit
µA
µA
V
V
Ω
S
Turn−on time
Switching time
Fall time
—
25
—
ns
—
55
—
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
—
—
—
—
170
12
8
4
—
—
—
—
nC
Source−Drain Ratings and Characteristics
(Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
I
DR
= 5 A, V
GS
= 0 V
I
DR
= 5 A, V
GS
= 0 V, dI
DR
/ dt = 50 A / µs
Test Condition
—
—
Min
—
—
—
—
—
Typ.
—
—
—
70
0.1
Max
5
20
−1.7
—
—
Unit
A
A
V
ns
µC
Marking
K2231
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-17
stm32/stm8
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