Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3180N
DESCRIPTION
・With
TO-3P(I) package
・Complement
to type 2SA1263N
APPLICATIONS
・Power
amplifier applications
・Recommend
for 40W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
80
80
5
6
0.6
UNIT
V
V
V
A
A
W
℃
℃
T
C
=25℃
60
150
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
ob
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=50mA ,I
B
=0
I
C
=5A; I
B
=0.5A
I
C
=3A ; V
CE
=5V
V
CB
=80V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
55
35
MIN
80
2SC3180N
TYP.
MAX
UNIT
V
2.0
1.5
5
5
160
V
V
μA
μA
固电
Output capacitance
导½
半
h
FE-1
Classifications
R
55-110
O
ANG
CH
IN
80-160
MIC
E SE
I
E
=0 ; V
CB
=10V ;f=1MHz
DUC
ON
30
105
OR
T
MHz
pF
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3180N
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3180N
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
4
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