2SK3371
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
2SK3371
Switching Regulator Applications
Unit: mm
Features
•
•
•
•
Low drain-source ON-resistance: R
DS (ON)
= 6.4
Ω
(typ.)
High forward transfer admittance: |Y
fs
| = 0.85 S (typ.)
Low leakage current: I
DSS
= 100 µA (max) (V
DSS
= 600 V)
Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (R
GS
=
20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D
E
AS
I
AR
E
AR
T
ch
T
stg
Rating
600
600
±30
1
2
20
56
1
2
150
−55
to 150
Unit
V
V
V
A
JEDEC
W
mJ
A
mJ
°C
°C
―
SC-64
2-7B1B
Drain power dissipation (Tc
=
25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
JEITA
TOSHIBA
Weight: 0.36 g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R
th (ch-c)
R
th (ch-a)
Max
6.25
125
Unit
°C/W
°C/W
JEDEC
JEITA
TOSHIBA
―
―
2-7J1B
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
=
90 V, T
ch
=
25°C, L
=
100 mH, I
AR
=
1 A, R
G
=
25
Ω
Note 3: Repetitive rating: pulse width limited by max channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Weight: 0.36 g (typ.)
1
2006-11-08
2SK3371
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
t
f
t
off
Q
g
Q
gs
Q
gd
V
DD
∼
400 V, V
GS
=
10 V, I
D
=
1 A
−
Symbol
I
GSS
V
(BR) GSS
I
DSS
V
(BR) DSS
V
th
R
DS (ON)
⎪Y
fs
⎪
C
iss
C
rss
C
oss
t
r
t
on
10 V
I
D
=
0.5 A V
OUT
V
DS
=
10 V, V
GS
=
0 V, f
=
1 MHz
Test Condition
V
GS
= ±25
V, V
DS
=
0 V
I
G
= ±10 µA,
V
DS
=
0 V
V
DS
=
600 V, V
GS
=
0 V
I
D
=
10 mA, V
GS
=
0 V
V
DS
=
10 V, I
D
=
1 mA
V
GS
=
10 V, I
D
=
0.5 A
V
DS
=
10 V, I
D
=
0.5 A
Min
⎯
±30
⎯
600
2.0
⎯
0.4
⎯
⎯
Typ.
⎯
⎯
⎯
⎯
⎯
6.4
0.85
190
15
55
12
55
40
90
9
3.5
5.5
Max
±10
⎯
100
⎯
4.0
9.0
⎯
⎯
⎯
pF
Unit
µA
V
µA
V
V
Ω
S
⎯
⎯
⎯
50
Ω
R
L
=
600
Ω
⎯
⎯
⎯
ns
V
GS
0V
⎯
V
DD
∼
300 V
−
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
Duty
<
1%, t
w
=
10
µs
=
Source-Drain Diode Ratings and Characteristics
(Ta
=
25°C)
Characteristic
Continuous drain reverse current
Pulse drain reverse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
⎯
⎯
I
DR
=
1 A, V
GS
=
0 V
I
DR
=
1 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/µs
Min
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
⎯
400
1.4
Max
1
2
−1.7
⎯
⎯
Unit
A
A
V
ns
µC
Marking
K3371
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-08
2SK3371
r
th
– t
w
10
Normalized transient thermal impedance
r
th (t)
/R
th (ch-c)
1
Duty
=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Duty
=
t/T
Rth (ch-c)
=
6.25°C/W
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Single pulse
Pulse width
t
w
(s)
Safe operating area
10
100
E
AS
– T
ch
(mJ)
EAS
Avalanche energy
100
µs
*
1 ms
*
ID max (pulsed)
*
80
(A)
1
ID max (continuous)
Drain current
ID
60
DC Tc
=
25°C
0.1
*
Single nonrepetitive pulse
Tc
=
25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
VDSS max
10
100
1000
40
20
0
25
50
75
100
125
150
Channel temperature (initial)
T
ch
(°C)
Drain-source voltage
V
DS
(V)
15 V
−15
V
B
VDSS
I
AR
V
DD
V
DS
Waveform
Ε
AS
=
⎛
⎞
1
B VDSS
⎟
⋅
L
⋅
I2
⋅ ⎜
⎜
B
⎟
2
⎝
VDSS
−
VDD
⎠
Test circuit
R
G
=
25
Ω
V
DD
=
90 V, L
=
100 mH
5
2006-11-08
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