Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1591
DESCRIPTION
・With
TO-220Fa package
・DARLINGTON
・Complement
to type 2SB1100
APPLICATIONS
・Low
frequency power amplification
・Low
speed power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Fig.1 simplified outline (TO-220Fa) and symbol
Emitter
・
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
固电
导½
半
PARAMETER
ANG
CH
IN
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
Base current (DC)
MIC
E SE
Open emitter
Open base
CONDITIONS
OR
CT
NDU
O
VALUE
150
100
7
10
15
0.5
UNIT
V
V
V
A
A
A
Open collector
T
a
=25℃
P
C
Collector power dissipation
T
C
=25℃
T
j
T
stg
Junction temperature
Storage temperature
2
W
30
150
-55~150
℃
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SD1591
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=0.1A ; I
B
=0
100
V
V
CEsat
Collector-emitter saturation voltage
I
C
=10A; I
B
=25mA
1.5
V
V
BEsat
Base-emitter saturation voltage
I
C
=10A; I
B
=25mA
2.0
V
I
CBO
Collector cut-off current
V
CB
=100V; I
E
=0
10
μA
I
CEO
Collector cut-off current
V
CE
=100V; I
E
=0
500
μA
I
EBO
Emitter cut-off current
V
EB
=7V ;I
C
=0
5
mA
h
FE
DC current gain
固电
导½
半
I
C
=10A ; V
CE
=2V
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
1000
30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1591
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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