Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA807
DESCRIPTION
·With
TO-3 package
·Wide
area of safe operation
·Complement
to type 2SC1618
APPLICATIONS
·For
power amplifier and general purpose
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
CONDITIONS
VALUE
-60
-60
-6
-6
-3
50
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
Open collector
P
C
T
j
T
stg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA I
B
=0
I
C
=-3A; I
B
=-0.3A
V
CB
=-60V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-12V
20
10
MIN
-60
TYP.
2SA807
MAX
UNIT
V
-1.5
-1.0
-1.0
V
mA
mA
MHz
Switching times
t
r
t
stg
t
f
Rise time
Storage time
Fall time
V
CC
=-10V;I
C
=-3A; R
L
=3Ω
I
B1
=-0.3A; I
B2
=50mA
1.2
1.8
0.3
μs
μs
μs
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA807
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
EEWORLD
