2SK3376MFV-C datasheet, PDF - EEWORLD Datasheet

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2SK3376MFV-C: DescriptionTRANSISTOR 0.52 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size153KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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2SK3376MFV-C Overview

TRANSISTOR 0.52 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal

2SK3376MFV-C Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00052 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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2SK3376MFV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376MFV

For ECM

•

Application for Ultra-compact ECM

0.22±0.05

1.2±0.05

0.32±0.05

0.13±0.05

0.8±0.05

Unit: mm

Absolute Maximum Ratings

(Ta=25°C)

Characteristic

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta

25°C)

Junction Temperature

Storage temperature range

Symbol

GDO

(Note 1)

stg

Rating

-20

150

125

−55~125

Unit

1.2±0.05

0.8±0.05

°C

0.4

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Mounted on FR4 board

0.5±0.05

0.4

VESM

1.Drain

2.Source

3.Gate

2-1L1C

JEDEC

JEITA

TOSHIBA

Weight: 1.5mg (typ.)

0.5mm

0.45mm

0.4mm

IDSS CLASSIFICATION

A-Rank

80 to 200µA

B-Rank

170 to 300µA

C-Rank

270 to 480µA

BK-Rank 150 to 350µA

Marking

Type Name

Equivalent Circuit

IDSS Classification Symbol

A :A -Rank

B :B-Rank , BK-Rank

C :C-Rank

2007-11-01

2SK3376MFV-C Related Products

	2SK3376MFV-C	2SK3376MFV-B	2SK3376MFV-A	2SK3376MFV-BK
Description	TRANSISTOR 0.52 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1L1C, VESM, 3 PIN, FET General Purpose Small Signal
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00052 A	0.00034 A	0.00024 A	0.00039 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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