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2SD1608

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size228KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric View All

2SD1608 Overview

Transistor

2SD1608 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
2SD1608
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 120V(Min)
·High
DC Current Gain
: h
FE
= 1000(Min) @I
C
= 4A
·High
Speed Switching
APPLICATIONS
·Designed
for medium speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
120
V
120
V
7
V
8
A
12
A
2
W
50
I
CP
Collector Current-Peak
Collector Power Dissipation
@ T
a
=25℃
P
C
Collector Power Dissipation
@ T
C
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn
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