Power Bipolar Transistor, 100A I(C), 600V V(BR)CEO, 2-Element, NPN, Silicon, M205, 9 PIN
| Parameter Name | Attribute value |
| package instruction | FLANGE MOUNT, R-XUFM-X3 |
| Contacts | 9 |
| Reach Compliance Code | unknow |
| Maximum collector current (IC) | 100 A |
| Collector-emitter maximum voltage | 600 V |
| Configuration | COMPLEX |
| Minimum DC current gain (hFE) | 100 |
| Maximum landing time (tf) | 4000 ns |
| JESD-30 code | R-XUFM-X3 |
| Number of components | 2 |
| Number of terminals | 3 |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 620 W |
| Maximum power dissipation(Abs) | 1240 W |
| Certification status | Not Qualified |
| Maximum rise time (tr) | 3000 ns |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 16000 ns |
| Maximum opening time (tons) | 3000 ns |
| Base Number Matches | 1 |
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