2SK3376TK-A datasheet, PDF - EEWORLD Datasheet

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2SK3376TK-A: DescriptionTRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size156KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SK3376TK-A Overview

TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal

2SK3376TK-A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00024 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-F3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN LEAD
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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2SK3376TK

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376TK

For ECM

•

Application for Ultra-compact ECM

0.22±0.05

1.2±0.05

0.8±0.05

0.32±0.05

0.1±0.05

Unit: mm

Absolute Maximum Ratings

(Ta=25°C)

0.45 0.45

1.4±0.05

Characteristic

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta

25°C)

Junction Temperature

Storage temperature range

Symbol

GDO

stg

Rating

-20

100

125

−55~125

Unit

°C

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

0.395±0.03

°C

0.9±0.1

TESM3

JEDEC

JEITA

TOSHIBA

1.Drain

2.Source

3.Gate

2-1R1A

Weight: 2.2 mg (typ.)

IDSS CLASSIFICATION

A-Rank

80 to 200 µA

B-Rank

170 to 300 µA

C-Rank

270 to 480 µA

BK-Rank 150 to 350 µA

Marking

Type Name

Equivalent Circuit

IDSS Classification Symbol

A :A -Rank

B :B-Rank , BK-Rank

C :C-Rank

2007-11-01

2SK3376TK-A Related Products

	2SK3376TK-A	2SK3376TK-BK	2SK3376TK-B	2SK3376TK-C
Description	TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.52 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FET General Purpose Small Signal
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3	SMALL OUTLINE, R-PDSO-F3
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00024 A	0.00039 A	0.00034 A	0.00052 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
JESD-609 code	e0	e0	e0	e0
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.1 W	0.1 W	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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