2SK3376TV-B datasheet, PDF - EEWORLD Datasheet

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2SK3376TV-B: DescriptionTRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size151KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SK3376TV-B Overview

TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal

2SK3376TV-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	LEAD FREE, 2-1H1A, VESM2, 3 PIN
Contacts	3
Reach Compliance Code	unknow
Shell connection	GATE
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00034 A
FET technology	JUNCTION
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Transistor component materials	SILICON
Base Number Matches	1

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2SK3376TV

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3376TV

For ECM

•

Application for Ultra-compact ECM

0.2±0.05

1.2±0.05

0.3±0.05

0.8±0.05

Unit: mm

1.2±0.05

0.8±0.1

Absolute Maximum Ratings

(Ta=25°C)

Characteristic

Gate-Drain voltage

Gate Current

Drain power dissipation (Ta

25°C)

Junction Temperature

Storage temperature range

Symbol

GDO

stg

Rating

-20

100

125

−55~125

Unit

°C

0.4

0.28±0.02

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

VESM2

JEDEC

JEITA

TOSHIBA

1.Drain

2.Source

3.Gate

2-1H1A

Weight: 0.8mg (typ.)

IDSS CLASSIFICATION

A-Rank

80 to 200µA

B-Rank

170 to 300µA

C-Rank

270 to 480µA

BK-Rank 150 to 350µA

Marking

Type Name

Top Gate

Lot Code

IDSS Classification Symbol

A :A-Rank

B :B-Rank , BK-Rank

C :C-Rank

Equivalent Circuit

□

Precaution

There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use

it as a terminal.

2007-11-01

0.09±0.03

2SK3376TV-B Related Products

	2SK3376TV-B	2SK3376TV-A	2SK3376TV-BK	2SK3376TV-C
Description	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.24 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.39 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal	TRANSISTOR 0.52 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, VESM2, 2-1H1A, 3 PIN, FET General Purpose Small Signal
Is it Rohs certified?	conform to	conform to	conform to	conform to
package instruction	LEAD FREE, 2-1H1A, VESM2, 3 PIN	LEAD FREE, 2-1H1A, VESM2, 3 PIN	LEAD FREE, 2-1H1A, VESM2, 3 PIN	LEAD FREE, 2-1H1A, VESM2, 3 PIN
Contacts	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow
Shell connection	GATE	GATE	GATE	GATE
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Maximum drain current (ID)	0.00034 A	0.00024 A	0.00039 A	0.00052 A
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3	R-PDSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1

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