Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB509
DESCRIPTION
・With
TO-66 package
・Complement
to type 2SD315
APPLICATIONS
・For
use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-66) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
固电
IN
导½
半
PARAMETER
Open emitter
Open base
Open collector
CONDITIONS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
MIC
E SE
OR
UCT
ND
O
VALUE
-60
-60
-5
-4
-10
UNIT
V
V
V
A
A
W
℃
℃
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
35
150
-40~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2SB509
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA ;I
B
=0
-60
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-2A; I
B
=-0.2A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-1A ; V
CE
=-2V
-1.5
V
I
CBO
Collector cut-off current
V
CB
=-20V; I
E
=0
-0.1
mA
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1.0
mA
h
FE-1
DC current gain
I
C
=-1A ; V
CE
=-2V
40
320
h
FE-2
DC current gain
f
T
固电
D
Transition frequency
导½
半
E
F
I
C
=-0.1A ; V
CE
=-2V
40
I
C
=-0.5A ; V
CE
=-5V
h
FE-1
Classifications
C
40-80
IN
60-120
ANG
CH
100-200
MIC
E SE
OR
UCT
ND
O
8
MHz
160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB509
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions
3
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